L&T Semiconductor Technologies Limited (LTSCT), a wholly owned subsidiary of Larsen & Toubro, has introduced its first Silicon Carbide (SiC) power semiconductor platform at SEMICON India 2026. The 1200V SiC MOSFET platform is designed for power-conversion applications including EV fast chargers, traction inverters, microgrids and solid-state transformers.
The development is particularly relevant to the shift from conventional 400V EV architectures toward 800V platforms. At the same power level, raising system voltage reduces the current required, which can help lower electrical losses and support faster charging. Research in Nature Reviews Electrical Engineering identifies 1200V SiC MOSFETs as a strong fit for 800V traction inverters because of their lower switching losses, high-temperature capability and potential for more compact power electronics.
SiC changes the power-conversion stage by allowing higher switching frequencies and lower losses than conventional silicon-based devices in suitable applications. In an EV traction inverter, this can reduce heat generated during conversion and create scope for smaller passive components and more compact thermal-management systems. The benefits ultimately depend on the complete vehicle architecture, including the battery, motor, inverter, cooling system and operating conditions.
LTSCT's 1200V platform is significant because the company is positioning the technology across several high-power applications rather than limiting it to one EV component. Its stated applications include traction inverters and fast chargers for electric mobility as well as microgrids and solid-state transformers for energy infrastructure. The company also showcased its first in-house SiC power modules and devices alongside the MOSFET platform.
The platform also highlights the importance of packaging and thermal engineering in extracting the full benefit of SiC. High-speed switching creates additional electromagnetic and thermal challenges, meaning the semiconductor cannot be evaluated independently from its module, gate driver, cooling and electrical layout. Recent research identifies low-inductance packaging, high-temperature materials and electro-thermal co-design as important requirements for reliable SiC systems.
For LTSCT, the announcement represents a move from semiconductor design toward a broader power-electronics product portfolio. The company describes itself as a fabless semiconductor enterprise, meaning the development is centered on chip and product design rather than operation of a semiconductor fabrication plant. Its wider portfolio covers automotive, industrial, energy and data-center applications.
The SiC platform also fits into India's broader effort to build domestic semiconductor and power-electronics capabilities. LTSCT displayed 40 products at SEMICON India 2026, including the SiC platform and a fully designed-in-India BLDC motor controller. The company has also been expanding partnerships around SiC power semiconductors, including a July 2026 agreement with Taiwan-based Azuremoto Technologies covering SiC MOSFETs, diodes and related modules for power applications.
The immediate importance of the 1200V SiC platform is therefore not simply the introduction of another semiconductor device. It is the possibility of enabling more compact and efficient power-conversion systems as EV manufacturers adopt higher-voltage architectures. For India, the development also adds a domestic semiconductor design capability to an EV value chain that increasingly depends on advanced power electronics, charging infrastructure and localized component technology.